Device with transparent and higher conductive regions in lateral cross section of semiconductor layer

ABSTRACT

A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

REFERENCE TO RELATED APPLICATIONS

The current application is a continuation of U.S. application Ser. No.15/200,313, filed on 1 Jul. 2016, which is a continuation-in-part ofU.S. application Ser. No. 14/721,082, filed on 26 May 2015, which claimsthe benefit of U.S. Provisional Application No. 62/090,101, filed on 10Dec. 2014, and which is a continuation-in-part of U.S. application Ser.No. 14/531,162, filed on 3 Nov. 2014, which is a continuation of U.S.application Ser. No. 14/184,649, filed on 19 Feb. 2014, which claims thebenefit of U.S. Provisional Application No. 61/768,692, filed on 25 Feb.2013, and which is a continuation-in-part of U.S. application Ser. No.13/572,446, filed on 10 Aug. 2012, which claims the benefit of U.S.Provisional Application No. 61/522,425, filed on 11 Aug. 2011, and U.S.Provisional Application No. 61/600,701, filed on 19 Feb. 2012, each ofwhich is hereby incorporated by reference in its entirety to providecontinuity of disclosure. Aspects of the invention are related to U.S.application Ser. No. 14/285,738, which was filed on 23 May 2014, andwhich is hereby incorporated by reference.

GOVERNMENT LICENSE RIGHTS

This invention was made with government support under contract no.W911NF-10-2-0023 awarded by the Defense Advanced Research ProjectsAgency (DARPA). The government has certain rights in the invention.

TECHNICAL FIELD

The disclosure relates generally to emitting devices, and moreparticularly, to an emitting device with improved efficiency.

BACKGROUND ART

Semiconductor emitting devices, such as light emitting diodes (LEDs) andlaser diodes (LDs), include solid state emitting devices composed ofgroup III-V semiconductors. A subset of group III-V semiconductorsincludes group III nitride alloys, which can include binary, ternary andquaternary alloys of indium (In), aluminum (Al), gallium (Ga), andnitrogen (N). Illustrative group III nitride based LEDs and LDs can beof the form In_(y)Al_(x)Ga_(1−x−y)N, where x and y indicate the molarfraction of a given element, 0≤x, y≤1, and 0≤x+y≤1. Other illustrativegroup III nitride based LEDs and LDs are based on boron (B) nitride (BN)and can be of the form Ga_(z)In_(y)Al_(x)B_(1−x−y−z)N, where 0≤x, y,z≤1, and 0≤x+y+z≤1.

An LED is typically composed of semiconducting layers. During operationof the LED, an applied bias across doped layers leads to injection ofelectrons and holes into an active layer where electron-holerecombination leads to light generation. Light is generated with uniformangular distribution and escapes the LED die by traversing semiconductorlayers in all directions. Each semiconducting layer has a particularcombination of molar fractions (e.g., x, y, and z) for the variouselements, which influences the electronic and optical properties of thelayer. In particular, the refractive index and absorptioncharacteristics of a layer are sensitive to the molar fractions of thesemiconductor alloy. Variation of the molar fraction throughout a layerresults in variation in the index of refraction and the band gap energyof the layer.

Ultraviolet LEDs are typically grown using group III-V semiconductorlayers such as layers of Al_(x)Ga_(1−x)N. It was found that the materialproperties of Al_(x)Ga_(1−x)N alloys change as the amount of aluminum inthe alloy is increased. With proper growth conditions, it also was foundthat the aluminum did not incorporate uniformly throughout the AlGaNlayer (i.e., the material has areas of high and low concentrations ofaluminum spread throughout). These compositional fluctuations, togetherwith doping fluctuations, also known as localized inhomogeneities,result in carrier localization and lead to the creation of conductionlayers for carriers.

The effect of compositional fluctuations have been well studied for blueLEDs with pioneering work of S. Chichibu, T. Azuhata, T. Sota and S.Nakamura, Applied Physics Letters. 1997 May 1, 70, 2822; S. Chichibu, K.Wada, and S. Nakamura, Applied Physics Letters, vol. 71, pp. 2346-2348,October 1997, each of which is incorporated herein by reference in itsentirety. The localization effect resulting from the creation oflocalized inhomogeneities has natural occurrence for InAIGaN alloysattributed to indium segregation. These effects have been reported inworks of E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert,E. Bellet-Amalric, Le Si Dang, and B. Daudin, J. Appl. Phys. 94, 3121(2003); Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, G. Simin, andM. Asif Khan, Appl. Phys. Lett. 80, 3730 (2002); H. Hirayama, A.Kinoshita, T. Yamabi, Y. Enomoto, A. Hirata, T. Araki, Y. Nanishi, andY. Aoyagi, Appl. Phys. Lett. 80, 207 (2002); C. H. Chen, Y. F. Chen, Z.H. Lan, L. C. Chen, K. H. Chen, H. X. Jiang, and J. Y. Lin, Appl. Phys.Lett. 84, 1480 (2004), each of which is incorporated herein by referencein its entirety. Further, small additions of indium were shown to smoothout the band-bottom potential profile in AlInGaN layers owing toimproved crystal quality. The effect of incorporation of 1% of indium toAlGaN semiconductor layer also has been studied. Similar to otherstudies, the creation of compositional inhomogeneities in asemiconductor layer with distinct double-scaled potential profile wasobserved, which indicates that indium atoms produce clusters of uniformconsistency interspersed in AlGaN background semiconductor alloy.

During the growth process of AlGaN semiconductor layers, small islandswith high aluminum content are formed. See A. Pinos, V. Liuolia, S.Marcinkevičius, J. Yang, R. Gaska, and M. S. Shur, Journal of AppliedPhysics, vol. 109, no. 11, p. 113516, 2011), which is incorporatedherein by reference in its entirety. Grains with high aluminum contentare separated by domain boundaries containing extended defects, whichare formed in order to accommodate the relative difference in crystalorientation among the islands. These defects have high gallium content.

Details of compositional fluctuation in AlGaN semiconductors have beenstudied by photoluminescence (PL) measured using scanning near fieldoptical microscopy (SNOM). Using this technique, the band gapfluctuations were observed to be of order of 50 meV. The fluctuationsincrease with higher aluminum content. For samples with low aluminumcontent (less than 0.4 molar fraction), the small-scale fluctuationsoccur within larger domains and are believed to be due to aninhomogeneous stress field and dislocations. For the aluminum molarfraction of 0.42 and higher, the small-scale potential variations wereobserved over the whole sample and assigned to the formation of Al-richgrains during the growth. Larger area potential variations of 25-40 meV,most clearly observed in the layers with a lower AlN molar fraction,have been attributed to Ga-rich regions close to grain boundaries oratomic layer steps. Analysis of the PL spectra allows evaluating averagepotential fluctuations due to inhomogeneous growth of AlGaN layers. Somefindings suggest that there are two spatial scales of potentialfluctuation—large scale of order of 1 μm and small scale that is lessthan 100 nm. Potential fluctuations reach amplitudes of few tens of meVat each scale.

FIG. 1 shows a schematic of compositional fluctuation according to theprior art. During the initial growth stage, adjacent small islands, fromwhich the growth starts, coalesce into larger grains. As the islandsenlarge, Ga adatoms, having a larger lateral mobility than Al adatoms,reach the island boundaries more rapidly, thus the Ga concentration inthe coalescence regions is higher than in the center of the islands. Thecomposition pattern, which is formed during the coalescence, ismaintained as the growth proceeds vertically. As a result of thecoalescence, the domain boundaries usually contain extended defects thatform to accommodate the relative difference in crystal orientation amongthe islands. Even in layers with smooth surfaces containing elongatedlayer steps, screw/mixed dislocations occur due to the localcompositional inhomogeneities.

High magnesium doping can lead to the creation of mini-bands originatingfrom the discrete acceptor levels. A red shift in room temperaturephotoluminescence spectra has been observed giving an indication thatminiband levels are emerging for acceptor concentration levels of theorder of n=10¹⁹-10²⁰ (1/cm³). In high acceptor concentration domains,hole wavefunctions may overlap thus forming hole conduction pathwaysthrough the material. These pathways lead to an increase of conductivitythrough semiconductor layers.

SUMMARY OF THE INVENTION

This Summary Of The Invention introduces a selection of certain conceptsin a brief form that are further described below in the DetailedDescription Of The Invention. It is not intended to exclusively identifykey features or essential features of the claimed subject matter setforth in the Claims, nor is it intended as an aid in determining thescope of the claimed subject matter.

In light of the above, the inventors recognize that compositional and/ordoping inhomogeneities allow for the development of conduction channels,e.g., in p-type superlattice layers. At the same time, the regions highin aluminum content allow for low light absorption (e.g., a highertransmission coefficient). The inventors propose to achieve a desiredbalance of higher conduction with reduced light absorption by tailoringsemiconductor properties through the use of composite inhomogeneities,thereby obtaining a more optimal semiconductor material for lightemitting/transmission applications.

Aspects of the invention provide a device including one or more layerswith lateral regions configured to facilitate the transmission ofradiation through the layer and lateral regions configured to facilitatecurrent flow through the layer. The layer can comprise a short periodsuperlattice, which includes barriers alternating with wells. In thiscase, the barriers can include both transparent regions, which areconfigured to reduce an amount of radiation that is absorbed in thelayer, and higher conductive regions, which are configured to keep thevoltage drop across the layer within a desired range.

A first aspect of the invention provides a device comprising: a shortperiod superlattice (SPSL) semiconductor layer comprising a plurality ofbarriers, wherein a composition of at least one barrier varies along thelateral dimensions of the at least one barrier such that a lateral crosssection of the at least one barrier includes: a set of transparentregions, each transparent region having a transmission coefficient for atarget radiation wavelength, I, greater than or equal to approximatelysixty percent, wherein the set of transparent regions are at least tenpercent of an area of the lateral cross section of the at least onebarrier; and a set of higher conductive regions occupying a sufficientarea of the area of the lateral cross section of the at least onebarrier and having an average resistance per unit area to a verticalcurrent flow resulting in a total voltage drop across the SPSL of lessthan approximately five volts.

A second aspect of the invention provides a device comprising: a shortperiod superlattice (SPSL) semiconductor layer comprising a plurality ofbarriers, wherein a lateral cross section of each barrier includes: aset of transparent regions, each transparent region having atransmission coefficient for a target radiation wavelength, I, greaterthan or equal to approximately sixty percent, wherein the set oftransparent regions are at least ten percent of an area of the lateralcross section of the barrier; and a set of higher conductive regionsoccupying a sufficient area of the area of the lateral cross section ofthe barrier and having an average resistance per unit area to a verticalcurrent flow resulting in a total voltage drop across the SPSL of lessthan approximately five volts.

A third aspect of the invention provides a method of fabricating adevice comprising: forming a short period superlattice (SPSL)semiconductor layer comprising a plurality of barriers, wherein alateral cross section of each barrier includes: a set of transparentregions, each transparent region having a transmission coefficient for atarget radiation wavelength, I, greater than or equal to approximatelysixty percent, wherein the set of transparent regions are at least tenpercent of an area of the lateral cross section of the barrier; and aset of higher conductive regions occupying a sufficient area of the areaof the lateral cross section of the barrier and having an averageresistance per unit area to a vertical current flow resulting in a totalvoltage drop across the SPSL of less than approximately five volts.

A fourth aspect of the invention provides a device comprising: a shortperiod superlattice (SPSL) semiconductor layer comprising a plurality ofbarriers, wherein a composition of at least one barrier varies alonglateral dimensions of the at least one barrier such that a lateral crosssection of the at least one barrier includes: a set of transparentregions having a first characteristic band gap, wherein the set oftransparent regions are at least ten percent of an area of the lateralcross section of the at least one barrier; and a set of higherconductive regions having a second characteristic band gap at least fivepercent smaller than the first characteristic band gap, wherein the setof higher conductive regions occupies a sufficient area of the area ofthe lateral cross section of the at least one barrier to keep a voltagedrop across the SPSL within a target range, and wherein lateralinhomogeneities in at least one of: the composition or a doping of theat least one barrier forms the set of transparent regions and the set ofhigher conductive regions.

A fifth aspect of the invention provides a device comprising: a shortperiod superlattice (SPSL) semiconductor layer comprising a plurality ofbarriers, wherein a lateral cross section of each barrier includes: aset of transparent regions, wherein the set of transparent regions areat least ten percent of an area of the lateral cross section of the atleast one barrier; and a set of higher conductive regions occupying asufficient area of the area of the lateral cross section of the at leastone barrier to keep a voltage drop across the SPSL within a targetrange, wherein a characteristic distance between two higher conductiveregions in the set of higher conductive regions is less than a lateralcurrent spreading length.

A sixth aspect of the invention provides a method of fabricating adevice comprising: forming a short period superlattice (SPSL)semiconductor layer comprising a plurality of barriers, wherein alateral cross section of each barrier includes: a set of transparentregions, wherein the set of transparent regions are at least ten percentof an area of the lateral cross section of the at least one barrier; anda set of higher conductive regions occupying a sufficient area of thearea of the lateral cross section of the at least one barrier to keep avoltage drop across the SPSL within a target range, wherein acharacteristic distance between two higher conductive regions in the setof higher conductive regions is less than a lateral current spreadinglength.

A seventh aspect of the invention provides a device comprising: asemiconductor layer comprising a set of group III nitride layers,wherein at least one of the group III nitride layers is an inhomogeneouslayer comprising: a set of transparent regions having a firstcharacteristic band gap, wherein the set of transparent regions are atleast ten percent of an area of the lateral cross section of theinhomogeneous layer; and a set of higher conductive regions having asecond characteristic band gap at least five percent smaller than thefirst characteristic band gap, wherein the set of higher conductiveregions occupy at least two percent of the area of the lateral crosssection of the inhomogeneous layer, and wherein lateral inhomogeneitiesin at least one of: a composition or a doping of the at least one of thegroup III nitride layers forms the set of transparent regions and theset of higher conductive regions.

An eighth aspect of the invention provides an emitting devicecomprising: an active region configured to generate electromagneticradiation having a target wavelength; and a semiconductor layercomprising a set of group III nitride layers, wherein at least one ofthe group III nitride layers is an inhomogeneous layer comprising: a setof transparent regions having a first characteristic band gap, whereinthe set of transparent regions are at least ten percent of an area ofthe lateral cross section of the inhomogeneous layer; and a set ofhigher conductive regions having a second characteristic band gap atleast five percent smaller than the first characteristic band gap,wherein the set of higher conductive regions occupy at least two percentof the area of the lateral cross section of the inhomogeneous layer, andwherein lateral inhomogeneities in at least one of: a composition or adoping of the at least one of the group III nitride layers forms the setof transparent regions and the set of higher conductive regions.

A ninth aspect of the invention provides an emitting device comprising:an active region configured to generate electromagnetic radiation havinga target wavelength; and a semiconductor layer comprising a set of groupIII nitride layers, wherein at least one of the group III nitride layersis an inhomogeneous Al_(x)In_(y)Ga_(1−x−y)N layer comprising: a set oftransparent regions having a first characteristic band gap, wherein theset of transparent regions are at least ten percent of an area of thelateral cross section of the inhomogeneous layer; and a set of higherconductive regions having a second characteristic band gap at least fivepercent smaller than the first characteristic band gap, wherein the setof higher conductive regions occupy at least two percent of the area ofthe lateral cross section of the inhomogeneous layer, and whereinlateral inhomogeneities in at least one of: a composition or a doping ofthe at least one of the group III nitride layers forms the set oftransparent regions and the set of higher conductive regions.

A tenth aspect of the invention provides a device, comprising: a shortperiod superlattice (SPSL) semiconductor layer comprising a plurality ofbarriers alternating with a plurality of quantum wells, wherein aconcentration of at least one barrier and a concentration of at leastone quantum well varies along lateral dimensions of the SPSLsemiconductor layer to form a two-dimensional carrier gas, wherein alateral cross section of the at least one barrier includes: a set oftransparent regions, each transparent region having a transmissioncoefficient for a target radiation wavelength, I, greater than or equalto approximately sixty percent, wherein the set of transparent regionsare at least ten percent of an area of the lateral cross section of theat least one barrier; and a set of higher conductive regions occupying asufficient area of the area of the lateral cross section of the at leastone barrier and having an average resistance per unit area to a verticalcurrent flow resulting in a total voltage drop across the SPSL of lessthan approximately five volts.

An eleventh aspect of the invention provides a device, comprising: ashort period superlattice (SPSL) semiconductor layer comprising aplurality of barriers, wherein a lateral cross section of each barrierincludes: a set of transparent regions, each transparent region having atransmission coefficient for a target radiation wavelength, I, greaterthan or equal to approximately sixty percent, wherein the set oftransparent regions are at least ten percent of an area of the lateralcross section of the barrier; and a set of higher conductive regionsoccupying a sufficient area of the area of the lateral cross section ofthe barrier and having an average resistance per unit area to a verticalcurrent flow resulting in a total voltage drop across the SPSL of lessthan approximately five volts; wherein the set of transparent regionsand the set of higher conductive regions are formed by a non-uniformcompositional distribution along the barrier thickness and/or barrierthickness of each barrier.

A twelfth aspect of the invention provides a device, comprising: asemiconductor layer comprising a set of group III nitride layers,wherein each one of the group III nitride layers is an inhomogeneouslayer comprising at least one of: a set of transparent regions having afirst characteristic band gap, wherein the set of transparent regionsare at least ten percent of an area of the lateral cross section of theinhomogeneous layer; and a set of higher conductive regions having asecond characteristic band gap at least five percent smaller than thefirst characteristic band gap, wherein the set of higher conductiveregions occupy at least two percent of the area of the lateral crosssection of the inhomogeneous layer, wherein the set of transparentregions and the set of higher conductive regions are structuredlaterally along the inhomogeneous layer in a periodic distribution,wherein the set of transparent regions and the set of higher conductiveregions are spatially phase-shifted in relation to a periodicdistribution of a set corresponding transparent regions and a set ofcorresponding higher conductive regions in immediately adjacent layers.

The illustrative aspects of the invention are designed to solve one ormore of the problems herein described and/or one or more other problemsnot discussed.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features of the disclosure will be more readilyunderstood from the following detailed description of the variousaspects of the invention taken in conjunction with the accompanyingdrawings that depict various aspects of the invention.

FIG. 1 shows a schematic of compositional fluctuation according to theprior art.

FIG. 2 shows a schematic structure of an illustrative emitting deviceaccording to an embodiment.

FIG. 3 shows an illustrative schematic representation of the variationsof the conduction or valence band due to compositional inhomogeneitiesaccording to an embodiment.

FIG. 4 shows an illustrative layer including domains with compositionalinhomogeneities according to an embodiment.

FIGS. 5A-5C show illustrative schematic representations of a p-typelayer formed using a p-type superlattice according to an embodiment.

FIG. 6 shows an illustrative band variation for a p-type superlatticeaccording to an embodiment.

FIG. 7 shows a schematic representation of an illustrative carrier pathin a complicated energy landscape caused by the inhomogeneitiesaccording to an embodiment.

FIG. 8 shows illustrative maps corresponding to an Al₅₀Ga₅₀N layer.

FIGS. 9A and 9B show band diagrams of portions of illustrative multiplequantum well structures according to embodiments.

FIG. 10A shows additional details of a hybrid structure/band diagram ofan illustrative plane within a multiple quantum well structure of adevice according to an embodiment, while FIG. 10B shows an illustrativeband gap map for the plane as a function of the y-axis according to anembodiment.

FIG. 11 shows the structure of an active and p-type layer according toan embodiment.

FIG. 12 shows the graded layer with compositional inhomogeneitiesaccording to an embodiment.

FIGS. 13A-13C show calculations for electron blocking and grading layerand a resultant polarization doping according to an embodiment.

FIGS. 14A-14C show calculations for a grading layer and a resultantpolarization doping according to an embodiment.

FIG. 15 shows the effect of the absorption coefficient of a p-typesuperlattice layer on the total extracted light from an illustrativelight emitting diode structure according to an embodiment.

FIG. 16 shows a numerical fit to the ray tracing data shown in FIG. 7according to an embodiment.

FIG. 17 shows a plot of the wall plug efficiency as a function of theconductance area fraction for typical light emitting diode materialsaccording to an embodiment.

FIG. 18 shows a typical dependence of the absorption coefficient on thewavelength for various aluminum molar fractions in a Al_(x)Ga_(1−x)Nalloy according to an embodiment.

FIG. 19 shows how the content of the aluminum can be chosen for eachemitted wavelength according to an embodiment.

FIGS. 20A and 20B show the distribution of inhomogeneities containingtwo scales for an illustrative semiconductor layer according to anembodiment.

FIGS. 21A-21C show examples of distributions of sets of transparentregions and sets of conductive regions within different layers of asemiconductor with the regions having periodic structures that arespatially-shifted between neighboring layers according to an embodiment.

FIG. 22 shows a semiconductor heterostructure grown over a substratehaving roughness elements according to an embodiment.

FIG. 23 shows an illustrative flow diagram for fabricating a circuitaccording to an embodiment.

It is noted that the drawings may not be to scale. The drawings areintended to depict only typical aspects of the invention, and thereforeshould not be considered as limiting the scope of the invention. In thedrawings, like numbering represents like elements between the drawings.

DETAILED DESCRIPTION OF THE INVENTION

As indicated above, aspects of the invention provide a device includingone or more layers with lateral regions configured to facilitate thetransmission of radiation through the layer and lateral regionsconfigured to facilitate current flow through the layer. The layer cancomprise a short period superlattice, which includes barriersalternating with wells. In this case, the barriers can include bothtransparent regions, which are configured to reduce an amount ofradiation that is absorbed in the layer, and higher conductive regions,which are configured to keep the voltage drop across the layer within adesired range. As used herein, unless otherwise noted, the term “set”means one or more (i.e., at least one) and the phrase “any solution”means any now known or later developed solution.

Turning to the drawings, FIG. 2 shows a schematic structure of anillustrative emitting device 10 according to an embodiment. In a moreparticular embodiment, the emitting device 10 is configured to operateas a light emitting diode (LED), such as a conventional or superluminescent LED. Alternatively, the emitting device 10 can be configuredto operate as a laser diode (LD). In either case, during operation ofthe emitting device 10, application of a bias comparable to the band gapresults in the emission of electromagnetic radiation from an activeregion 18 of the emitting device 10. The electromagnetic radiationemitted by the emitting device 10 can comprise a peak wavelength withinany range of wavelengths, including visible light, ultravioletradiation, deep ultraviolet radiation, infrared light, and/or the like.In an embodiment, the device is configured to emit radiation having adominant wavelength within the ultraviolet range of wavelengths. In amore specific embodiment, the dominant wavelength is within a range ofwavelengths between approximately 210 and approximately 350 nanometers.

The emitting device 10 includes a heterostructure comprising a substrate12, a buffer layer 14 adjacent to the substrate 12, an n-type claddinglayer 16 (e.g., an electron supply layer) adjacent to the buffer layer14, and an active region 18 having an n-type side 19A adjacent to then-type cladding layer 16. Furthermore, the heterostructure of theemitting device 10 includes a p-type layer 20 (e.g., an electronblocking layer) adjacent to a p-type side 19B of the active region 18and a p-type cladding layer 22 (e.g., a hole supply layer) adjacent tothe p-type layer 20.

In a more particular illustrative embodiment, the emitting device 10 isa group III-V materials based device, in which some or all of thevarious layers are formed of elements selected from the group III-Vmaterials system. In a still more particular illustrative embodiment,the various layers of the emitting device 10 are formed of group IIInitride based materials. Group III nitride materials comprise one ormore group III elements (e.g., boron (B), aluminum (Al), gallium (Ga),and indium (In)) and nitrogen (N), such that B_(W)Al_(X)Ga_(Y)In_(Z)N,where 0≤W, X, Y, Z≤1, and W+X+Y+Z=1. Illustrative group III nitridematerials include binary, ternary and quaternary alloys such as, AlN,GaN, InN, BN, AlGaN, AlInN, AlBN, AlGaInN, AlGaBN, AlInBN, and AlGaInBNwith any molar fraction of group III elements.

An illustrative embodiment of a group III nitride based emitting device10 includes an active region 18 (e.g., a series of alternating quantumwells and barriers) composed of In_(y)Al_(x)Ga_(1−x−y)N,Ga_(z)In_(y)Al_(x)B_(1−x−y−z)N, an Al_(x)Ga_(1−x)N semiconductor alloy,or the like. Similarly, both the n-type cladding layer 16 and the p-typelayer 20 can be composed of an In_(y)Al_(x)Ga_(1−x−y)N alloy, aGa_(z)In_(y)Al_(x)B_(1−x−y−z)N alloy, or the like. The molar fractionsgiven by x, y, and z can vary between the various layers 16, 18, and 20.The substrate 12 can be sapphire, silicon carbide (SiC), silicon (Si),GaN, AlGaN, AlON, LiGaO₂, or another suitable material, and the bufferlayer 14 can be composed of AlN, an AlGaN/AlN superlattice, and/or thelike.

As shown with respect to the emitting device 10, a p-type metal 24 canbe attached to the p-type cladding layer 22 and a p-type contact 26 canbe attached to the p-type metal 24. Similarly, an n-type metal 28 can beattached to the n-type cladding layer 16 and an n-type contact 30 can beattached to the n-type metal 28. The p-type metal 24 and the n-typemetal 28 can form ohmic contacts to the corresponding layers 22, 16,respectively. In an embodiment, the p-type metal 24 and the n-type metal28 each comprise several conductive and reflective metal layers, whilethe n-type contact 30 and the p-type contact 26 each comprise highlyconductive metal. In an embodiment, the p-type cladding layer 22 and/orthe p-type contact 26 can be at least partially transparent (e.g.,semi-transparent or transparent) to the electromagnetic radiationgenerated by the active region 18. For example, the p-type claddinglayer 22 and/or the p-type contact 26 can comprise a short periodsuperlattice lattice structure, such as an at least partiallytransparent magnesium (Mg)-doped AlGaN/AlGaN short period superlatticestructure (SPSL). Furthermore, the p-type contact 26 and/or the n-typecontact 30 can be at least partially reflective of the electromagneticradiation generated by the active region 18. In another embodiment, then-type cladding layer 16 and/or the n-type contact 30 can be formed of ashort period superlattice, such as an AlGaN SPSL, which is at leastpartially transparent to the electromagnetic radiation generated by theactive region 18.

As used herein, a layer is at least partially transparent when the layerallows at least a portion of electromagnetic radiation in acorresponding range of radiation wavelengths to pass there through. Forexample, a layer can be configured to be at least partially transparentto a range of radiation wavelengths corresponding to a peak emissionwavelength for the light (such as ultraviolet light or deep ultravioletlight) emitted by the active region 18 (e.g., peak emissionwavelength+/−five nanometers). As used herein, a layer is at leastpartially transparent to radiation if it allows more than approximately0.5 percent of the radiation to pass there through. In a more particularembodiment, an at least partially transparent layer is configured toallow more than approximately five percent of the radiation to passthere through. Similarly, a layer is at least partially reflective whenthe layer reflects at least a portion of the relevant electromagneticradiation (e.g., light having wavelengths close to the peak emission ofthe active region). In an embodiment, an at least partially reflectivelayer is configured to reflect at least approximately five percent ofthe radiation.

As further shown with respect to the emitting device 10, the device 10can be mounted to a submount 36 via the contacts 26, 30. In this case,the substrate 12 is located on the top of the emitting device 10. Tothis extent, the p-type contact 26 and the n-type contact 30 can both beattached to a submount 36 via contact pads 32, 34, respectively. Thesubmount 36 can be formed of aluminum nitride (AlN), silicon carbide(SiC), and/or the like.

Any of the various layers of the emitting device 10 can comprise asubstantially uniform composition or a graded composition. For example,a layer can comprise a graded composition at a heterointerface withanother layer. In an embodiment, the p-type layer 20 comprises a p-typeblocking layer having a graded composition. The graded composition(s)can be included to, for example, reduce stress, improve carrierinjection, and/or the like. Similarly, a layer can comprise asuperlattice including a plurality of periods, which can be configuredto reduce stress, and/or the like. In this case, the composition and/orwidth of each period can vary periodically or aperiodically from periodto period.

It is understood that the layer configuration of the emitting device 10described herein is only illustrative. To this extent, an emittingdevice/heterostructure can include an alternative layer configuration,one or more additional layers, and/or the like. As a result, while thevarious layers are shown immediately adjacent to one another (e.g.,contacting one another), it is understood that one or more intermediatelayers can be present in an emitting device/heterostructure. Forexample, an illustrative emitting device/heterostructure can include anundoped layer between the active region 18 and one or both of the p-typecladding layer 22 and the electron supply layer 16.

Furthermore, an emitting device/heterostructure can include aDistributive Bragg Reflector (DBR) structure, which can be configured toreflect light of particular wavelength(s), such as those emitted by theactive region 18, thereby enhancing the output power of thedevice/heterostructure. For example, the DBR structure can be locatedbetween the p-type cladding layer 22 and the active region 18.Similarly, a device/heterostructure can include a p-type layer locatedbetween the p-type cladding layer 22 and the active region 18. The DBRstructure and/or the p-type layer can comprise any composition based ona desired wavelength of the light generated by thedevice/heterostructure. In one embodiment, the DBR structure comprises aMg, Mn, Be, or Mg+Si-doped p-type composition. The p-type layer cancomprise a p-type AlGaN, AlInGaN, and/or the like. It is understood thata device/heterostructure can include both the DBR structure and thep-type layer (which can be located between the DBR structure and thep-type cladding layer 22) or can include only one of the DBR structureor the p-type layer. In an embodiment, the p-type layer can be includedin the device/heterostructure in place of an electron blocking layer. Inanother embodiment, the p-type layer can be included between the p-typecladding layer 22 and the electron blocking layer.

Regardless, as described herein, one or more of the semiconductor layersof the device 10 can comprise nano-scale and/or micron-scale localizedcompositional and/or doping inhomogeneities along the lateral dimensionsof the device die. For example, a semiconductor layer can be p-dopedwith magnesium or n-doped with silicon to create the inhomogeneities.These inhomogeneities provide variation of band gap energy in a lateraldirection of the layer, which results in a complicated energy landscapefor a lateral cross section of the layer. In particular, theinhomogeneities will result in lower band gap regions, which becomeplaces of charge localization and form a set of higher conductiveregions of carrier conductive channels in the semiconductor layer. Thesehigher conductive regions have an improved vertical conductivity overthat of a substantially homogenous layer of the material. Additionally,the inhomogeneities also will result in high band gap regions, whichform a set of at least partially transparent regions within the layer,each of which has an improved vertical transparency over that of asubstantially homogenous layer of the material.

Inclusion of the inhomogeneities in one or more of the semiconductorlayers of the device 10 can result in an improvement in the efficiencyof the device 10. The inhomogeneities can be included in any layer ofthe semiconductor device 10. To this extent, the inhomogeneities can beincluded in a superlattice region, a nucleation region, a buffer layer,a cladding layer, an active region, and/or the like of the device 10. Inan embodiment, the inhomogeneities are incorporated into one or moreinjection layers, such as the n-type cladding layer 16, the p-type layer20, the p-type cladding layer 22, the n-type contact 30, the p-typecontact 26, and/or the like.

In an illustrative embodiment described further herein, theinhomogeneities are incorporated into a layer formed using a p-typesuperlattice, such as the p-type cladding layer 22. For example, thep-type cladding layer 22 can comprise a periodic structure composed of aset of barriers alternating with a set of wells. In a more specificembodiment, the sets of barriers and wells are each formed of a groupIII nitride material where each barrier comprises a higher aluminumcontent (molar fraction) than the adjacent well(s). In a still morespecific embodiment, each barrier and well in the periodic structure canhave a thickness less than approximately three nanometers. The p-typecladding layer 22 can be modulation p-doped with magnesium toincorporate the inhomogeneities. In an embodiment, the doping is suchthat a concentration of magnesium in the barrier regions is higher than5·10¹⁸ [1/cm³] and a concentration of magnesium in the well regions islower than 5·10¹⁵ [1/cm³].

In an alternative embodiment, a layer, such as the p-type cladding layer22, can include a layer with compositional inhomogeneities. In thisembodiment, the p-type cladding layer 22 can include a set of group IIInitride material layers and at least one of the layers in the set oflayers can include compositional inhomogeneities (e.g., higher or loweraluminum and/or indium content). This inhomogeneous layer (or group ofinhomogeneous layers, if more than one layer include compositionalinhomogeneities) can have a thickness of between approximately one toone hundred nanometers. The difference between an average bandgap forthe inhomogeneous layer and an average bandgap for a remaining portionof the p-type cladding layer 22 is at least thermal energy. Acharacteristic size of the plurality of compositional inhomogeneousregions in the inhomogeneous layer can be smaller than an inverse of adislocation density for the layer 22. In an embodiment, an inhomogeneouslayer in the p-type cladding layer 22 can be immediately adjacent to thep-type metal 24. In this embodiment, the p-type metal 24 can be at leastapproximately thirty percent reflective. The plurality of compositionalinhomogeneous regions in the inhomogeneous layer can include differentlateral scales and can include nanoscale inhomogeneities. For example,at least a portion of the plurality of compositional inhomogeneousregions can include inhomogeneities that are from a few to a few hundrednanometers. In another example, at least a portion of the plurality ofcompositional inhomogeneous regions can include inhomogeneities that arelarge scale and on the order of a few microns.

FIG. 3 shows an illustrative schematic representation of variations ofthe conduction or valence band due to compositional inhomogeneitiesaccording to an embodiment. The variations are shown over a lateral areaof the semiconductor layer in the zoomed in portion 30. These variationsin the conduction or valence band can be due to variations in molarfractions of one or more elements in the lateral area of the layer. Forexample, the variations in the conduction or valence band can be due tolateral variations of aluminum nitride molar fractions, indium nitridemolar fractions, both, and/or the like. The variations of aluminum (Al)and/or indium (In) within a semiconductor layer (e.g., p-type claddinglayer 22 in FIG. 2) can be at different portions of the layer. Forexample, as seen in FIG. 4, for any given layer 40, a first domain 42can include a variation of a molar fraction (e.g., variation in themolar fraction of In), while a second domain 44 includes a variation ofanother molar fraction (e.g., variation in the molar fraction of Al).The result of one or both of these variations in domains 42, 44 is avariation in the conduction or valence band 46.

FIGS. 5A-5C show illustrative schematic representations of the p-typecladding layer 22 formed using a p-type superlattice according to anembodiment. In an another embodiment, the p-type cladding layer 22 canbe formed by a single layer as described herein. The p-type claddinglayer 22 is shown adjacent to the p-type metal 24. In FIGS. 5A-5C, areaswith a high aluminum composition are indicated by the dark regions,while areas with a low aluminum composition are indicated by thelighter/bright regions. To this extent, FIG. 5A illustrates variation inaluminum composition within the layer 22 along the height of the layer(e.g., indicated by direction z) in a direction normal to a surface ofthe layer 22 adjacent to the p-type metal 24. In particular, if thep-type cladding layer 22 is formed using a p-type superlattice, thep-type cladding layer 22 can be formed of a p-typeAl_(x)Ga_(1−x)N/Al_(y)Ga_(1−y)N superlattice, where molar fractions xand y correspond to the molar fractions of barriers and wells,respectively, and where the molar fraction x is greater than the molarfraction y. Each barrier and well can be approximately a few nanometersin thickness. For example, the wells can have a thickness in a rangebetween approximately one and approximately six nanometers, and thebarriers can have a thickness in a range between approximately five andapproximately twenty nanometers. In an embodiment, the superlattice oflayer 22 includes compositional grading. In another embodiment, thelayer 22 can include an aperiodic superlattice, where the period variesalong with the compositional grading.

FIG. 5B illustrates variation in the aluminum composition of the p-typecladding layer 22 in the lateral directions (e.g., indicated bydirections x and y) of the layer 22. FIG. 5B can correspond to a lateralcross section of the layer 22 taken along a barrier of the layer 22. Asused herein, the term lateral means the plane of the layer 22 that issubstantially parallel with the surface of the layer 22 adjacent toanother layer of the device 10 (FIG. 2), such as the surface of thelayer 22 adjacent to the p-type metal 24. As illustrated, the lateralcross section of the layer 22 includes a set of transparent regions,which correspond to those regions having a relatively high aluminumcontent, and a set of higher conductive regions, which correspond tothose regions having a relatively low aluminum content.

In an alternative embodiment, the p-type cladding layer 22 can be asingle layer that incorporates indium. FIG. 5C illustrates variation inthe aluminum and indium composition of the p-type cladding layer 22 inthe lateral directions (e.g., indicated by directions x and y) of thelayer 22. Similar to FIG. 5B, FIG. 5C can correspond to a lateral crosssection of the layer 22. The lateral cross section of the layer 22 caninclude a set of transparent regions (e.g., high aluminum content andlow indium content) and a set of higher conductive regions (e.g., lowaluminum content and higher indium content). The layer 22 can alsoinclude a set of regions comprising high indium content. In thisembodiment, the inhomogeneities in the molar fraction of aluminum can beat a different scale than the inhomogeneities in the molar fraction ofindium. Furthermore, the scale of the inhomogeneities of both aluminumand indium can depend on details of the growth conditions, such asgrowth temperature, ratio of the precursors, the V/III ratio of eachprecursor, and/or the like. The method of growth can incorporate pulsedgrowth where the flow of precursors is separated in time.

The set of transparent regions can be configured to allow a significantamount of the radiation to pass through the layer 22, while the set ofhigher conductive regions can be configured to keep the voltage dropacross the layer 22 within a desired range (e.g., less than five volts).In an embodiment, the total voltage drop across the layer 22 is lessthan ten percent of the total voltage drop across the entire device. Inan embodiment, the set of transparent regions occupy at least tenpercent of the lateral area of the layer 22, while the set of higherconductive regions occupy at least approximately two percent (fivepercent in a more specific embodiment) of the lateral area of the layer22. Furthermore, in an embodiment, a band gap of the higher conductiveregions is at least five percent smaller than the band gap of thetransparent regions. In a more particular embodiment, the transparentregions comprise a transmission coefficient for radiation of a targetwavelength higher than approximately fifty percent (sixty percent inanother embodiment and eighty percent in a still more particularembodiment), while the higher conductive regions have a resistance perunit area to vertical current flow that is smaller than approximately10⁻² ohm·cm². In an embodiment, the transparent regions can comprise atransmission coefficient for radiation of a target wavelength higherthan the transmission coefficient of the conductive region by at least20%. As used herein, the term transmission coefficient means the ratioof an amount of radiation exiting of the region to an amount ofradiation entering the region.

The set of transparent regions can be configured to form a photoniccrystal. The photonic crystal can be configured to reduce an amount ofradiation that is absorbed in the layer 22 by dispersing the radiation.The photonic crystal can be configured to form a lattice with at leastone characteristic size T1 and a photonic crystal lattice vector a,wherein, in an embodiment, the characteristic size T1 can be on theorder of the target radiation wavelength. Additionally, the latticevector a can be on the order of the target radiation wavelength. Whilevarious photonic crystal embodiments are possible, the most readilymanufactured is a photonic crystal comprising hexagonally positionedcylindrical transparent regions. It is understood that the photoniccrystal may be imperfect, comprise transparent regions of non-similarshapes varying in size by as much as a few hundred percent separated bya characteristic distance that can vary throughout the material by asmuch as several hundred percent. It is also understood that the set oftransparent regions can be manufactured using any solution, includingone or more of: patterning, masking, epitaxial overgrowth combined withtechniques such as thermal evaporation, magnetron sputtering, ion-beamdeposition, laser beam evaporation, and/or the like.

The set of transparent regions can be interspersed with the set ofhigher conductive regions to form an interconnected network ofconductive paths. FIG. 7 shows a schematic representation of anillustrative carrier path in a complicated energy landscape caused bythe inhomogeneities according to an embodiment. As shown, the set ofhigher conductive regions (darker regions) are interspersed with the setof transparent regions (lighter regions) to form conductive channels forthe interconnected network. The interconnected network of conductivepaths allows for conductivity throughout the semiconductor layer (e.g.,layer 22) containing the set of transparent regions. As used herein, theterms “interconnected network”, “interconnected domain”, or similarexpressions describe domains including multiple smaller percolatedregions, separated from each other by gaps. The percolated region sizecan be at least several lattice constants measured in the basal plane ofthe semiconductor lattice (e.g., group III nitride) and gaps can be atleast two lattice constants measured in a basal plane. Alternatively,gaps can be steps between several basal planes. Further, a region (e.g.,the set of higher conductive regions) is said to be percolated if, forany two atoms in the region, there is a conductive path connecting theseatoms that lies entirely in the region.

The transparent and conductive regions can be formed using any solution.For example, the layer 22 can be grown using migration-enhancedmetalorganic chemical vapor deposition (MEMOCVD). During the growth,inhomogeneities in the lateral direction of a molar fraction of one ormore elements, such as aluminum, gallium, indium, boron, and/or thelike, can be allowed of the layer 22. In an embodiment, suchcompositional inhomogeneities can vary by at least one percent.

Furthermore, in the embodiment of the layer 22 comprising a SPSL, thelayer 22 can have a non-uniform distribution of a thickness of one ormore of the barriers in the SPSL. The non-uniform distribution can beconfigured to create the transparent regions and the higher conductiveregions. In an embodiment, the non-uniform distribution is accomplishedby growing a film under a facetted or three-dimensional growth mode.This growth mode is achieved while growing under conditions where thegrowth rate of the film is determined by the arrival rate of activenitrogen (N-limited). Furthermore, this growth mode is achieved bygrowing under nearly stoichiometric conditions where the ratio of thearrival rate of group-III atoms (Al, Ga) and the arrival rate of activenitrogen is about unity. Moreover, the nanometer scale compositionalinhomogeneities are self-assembled within the film as a result of such agrowth mode.

In an embodiment, an illustrative process can be implemented to providea growth mode for producing an Al_(x)Ga_(1−x)N alloy film, which can beutilized as a p-type layer in an emitting device. Such a growth mode canbe defined by substrate temperature, a ratio of the group V/group IIIelements, doping concentration, and/or the like. For example, thesubstrate temperature can be between approximately 750 and approximately1300 degrees Celsius. Additionally, an inhomogeneous distribution ofaluminum can be obtained by controlling a density of screw dislocationspresent in the material. The density of the screw dislocations can becontrolled, for example, by alternating the group V/group III elementratio in the inhomogeneous layer (e.g., the SPSL layers). The groupV/group III element ratio can be in a range of ratios betweenapproximately 20 and approximately 10000.

Still further, if the layer 22 is an SPSL layer, the growth of the layer22 can allow a non-uniform compositional distribution along the barrierheight and/or barrier thickness. Even further, when the layer 22 isdoped, the growth of the layer 22 can allow a non-uniform dopingdistribution along the barrier height and/or barrier thickness. Inanother embodiment, if the layer 22 is a single layer, the growth of thelayer 22 can still allow for non-uniform doping in addition to thenon-uniform compositional distribution. For example, modulation dopingof the layer 22 can be utilized to create a variation of acceptorconcentration within the layer that exceeds approximately 1×10¹⁸ 1/cm³.

In an embodiment, an SPSL layer described herein can be formed directlyon an inhomogeneous layer (e.g., p-type layer 20 shown in FIG. 2), whichcan promote the SPSL semiconductor layer (e.g., layer 22 shown in FIG.2) to form the transparent and conductive regions. In anotherembodiment, a layer containing the transparent and conductive regionsdescribed herein can be formed directly on a layer grown using athree-dimensional growth mode (e.g., a 3D layer, such as p-type layer 20shown in FIG. 2). The 3D layer (e.g., p-type layer 20) can promote thelayer containing the transparent and conductive regions (e.g., p-typecladding layer 22 in FIG. 2) to form the transparent and conductiveregions. In either embodiment, the inhomogeneous layer and the 3D layercan be grown in a similar manner as the SPSL semiconductor layer or thelayer containing the transparent and conductive regions, respectively,and also include transparent and conductive regions as described herein.However, the growth temperature of the inhomogeneous layer can be atleast approximately two hundred degrees Celsius lower than the growthtemperature used for growing the SPSL semiconductor layer and the layercontaining the transparent and conductive regions. Furthermore, athickness of the inhomogeneous layer and the 3D layer can be less thanapproximately 20 nanometers. In an embodiment, the growth of theinhomogeneous layer and the 3D layer can include: enabling the threedimensional (e.g., side and upward) coalescence of islands (e.g., ofAl), which are grown at a temperature approximately two hundred degreesCelsius lower than the temperature used for growing the SPSLsemiconductor layer; followed by two dimensional growth of theinhomogeneous layer around the islands using distinctly different growthconditions than during the formation of the islands. For example, thetwo dimensional growth can be at a temperature and/or a group V/groupIII element ratio comparable to that used for growing the SPSLsemiconductor layer. The growth of islands followed by two dimensionalgrowth can be repeated one or more times to form the inhomogeneouslayer. While use of MEMOCVD is described herein, it is understood thatgrowth of one or more of the layers can utilize another growth solution,such as metallo organic chemical vapor deposition (MOCVD), molecularbeam epitaxy (MBE, as utilized in U.S. Pat. No. 7,812,366), and/or thelike.

FIG. 6 shows an illustrative band variation for a p-type superlattice,such as the layer 22 shown in FIGS. 5A-5C, according to an embodiment.Built in polarization fields result in the skewed band levels. Theskewed band levels lead to the localization of carriers. For cases whendoping is relatively small in the superlattice quantum wells, butrelatively high in the barriers, acceptor ionization in the barriers ispossible and can result in a large concentration of holes in the quantumwells, which leads to the formation of a two-dimensional carrier gasillustrated by the grey “clouded” regions of FIG. 6. In an embodiment,the quantum wells have a concentration less than 5·10¹⁷ [1/cm³] (e.g., aconcentration less than 5·10¹⁵ [1/cm³]), while the barriers have aconcentration greater than 5·10¹⁷ [1/cm³] (e.g., a concentration higherthan 5·10¹⁸ [1/cm³]).

The carrier path through the layer 22 (FIGS. 5A-5C) is composed of adiffusive lateral component due to the high mobility of carriers in thelateral direction, barrier tunneling, and/or penetration throughconducting channels in a direction normal to the semiconductor layer 22.FIG. 7 shows a schematic representation of an illustrative carrier pathin a complicated energy landscape caused by the inhomogeneitiesaccording to an embodiment. As illustrated, the carrier path runsthrough the low energy valleys (e.g., higher conductivity regions) ofthe energy landscape (indicated by dark regions), and propagates throughregions containing a high concentration of dopants. In these valleys andregions, the electrons and holes experience smaller energy barriers,which they can penetrate through using the low energy valleys. In anembodiment, a characteristic distance between the higher conductingregions is less than a lateral current spreading length within thelayer. For example, the lateral current spreading length can be 0.1 μmor larger.

FIG. 8 shows illustrative maps corresponding to an Al₅₀Ga₅₀N layer. Inparticular, FIG. 8 includes: a) a near-field photoluminescence map ofthe peak intensity; b) a near-field photoluminescence map of the peakenergy; d) a near-field photoluminescence map of the full width at halfmaximum (FWHM); c) a map of near-field and far-field spectra; e) a mapof intensity correlation; and f) a map of FWHM correlation. Asillustrated, the emission is non-uniform throughout the active layerstructure and includes high intensity red shifted regions, which arecorrelated to islands containing lower aluminum content than thesurrounding area.

In another embodiment, a distribution of the compositional inhomogeneousregions can be graded across a layer. For example, a depth of the energylevel across a layer including the compositional inhomogeneous regionscan increase or decrease from an area proximate to a first semiconductorlayer to an area proximate to a second semiconductor layer. In anembodiment, the inhomogeneous layer can be graded such that there is noband gap discontinuity at the interfaces of the inhomogeneous layer andthe semiconductor layers adjacent to the inhomogeneous layer. Turningnow to FIGS. 9A and 9B, illustrative band diagrams for a layer 40including compositional inhomogeneous regions are shown. In FIG. 9A, thedistribution of compositional inhomogeneous regions is graded so thatthe energy depth decreases towards a first semiconductor layer 42. InFIG. 9B, the distribution of compositional inhomogeneous regions isgraded so that the energy depth increases towards the firstsemiconductor layer 42. The grading can be designed to improveelectron-hole wave function overlap, which promotes the electron-holeradiative recombination. In an embodiment, the grading can be selectedto offset the changes in the band gap due to the presence of spontaneousand piezoelectric polarization, which can be as much as approximatelyone electron volt. In another embodiment, the length scale of theinhomogeneity can change across the layer. For example, in FIG. 9B, thecompositional inhomogeneous regions 44A immediately adjacent to thefirst semiconductor layer 42 are relatively larger than thecompositional inhomogeneous regions 44B farthest away from the firstsemiconductor layer 42. In an embodiment, the length scale ofcompositional inhomogeneous regions 44A can be as much as severalmicrometers on the first side of the semiconductor layer and fewnanometers on the second side of the semiconductor layer 42. Thedistance scale between the inhomogeneities on the first side of thesemiconductor layer 42 can also be substantially different from thedistance scale between the inhomogeneities on the second semiconductorlayer 42. The change in the length scale from the first to second sideof the semiconductor layer 42 allows for a different amount ofelectron-hole localization and improved radiative recombination ofelectron-hole pairs. For example, the first side of the semiconductorlayer 42 can have characteristic distance between inhomogeneities thatare on the order of few microns. The second side of the semiconductorlayer 42 can have a characteristic distance of only few nanometers.

In an embodiment shown in FIG. 10A, a semiconductor layer can includeboth large and small scale compositional inhomogeneous regions (whichcan be achieved, for example, by varying conditions of the epitaxialgrowth). The large scale compositional inhomogeneous regions 46A canhave large lateral areas of inhomogeneous regions. For example, thelateral area for the large scale compositional inhomogeneous regions 46Acan be configured to be larger than the square of the characteristicdistance between the threading dislocations 48 (which can be achieved,for example, by varying conditions of the epitaxial growth). An energydepth of the large scale compositional inhomogeneous regions 46A can beon the order of one thermal energy or more. The large scalecompositional inhomogeneous regions 46A can allow for an efficientcapture of the carriers, relative localization of the carriers withinthe large energy valleys (e.g., 46A in the band gap map of FIG. 10B),and/or the like. Subsequent localization of carriers can be due tocapture at the small scale compositional inhomogeneous regions 46B. Thesmall scale compositional inhomogeneous regions 46B also can have adepth on the order of one thermal energy or more. The small scalecompositional inhomogeneous regions 46B have a lateral area that issmaller than the square of the characteristic distance between thethreading dislocations 48. The small scale compositional inhomogeneousregions 46B allow for capturing the carriers before the carriers arecaptured by the threading dislocations 48.

Turning now to FIG. 11, an illustrative energy plot for a structure 200containing a n-type cladding layer 202, an active layer 204, an electronblocking layer 206 graded into a SPSL 208, a p-type contact layer 210that is shown to have a graded composition, which results in narrowingof a band gap, and a narrow band gap region 212. The narrow band gapregion 212 can comprise a material with an overall bandgap that issmaller than the typical band gap of the p-type layer 210, such as GaN,InGaN, InAIGaN, and/or the like. Furthermore, the narrow band gap region212 can comprise a set of layers with at least one layer havinginhomogeneities that result in the presence of transparent andconductive regions, as described herein. In an embodiment, such a layer(e.g., narrow band gap region 212) can contain In and be heavily dopedwith p-type dopants, such as Mg, and/or the like. In another embodiment,the narrow band gap region 212 can contain highly doped p-type (e.g.,p++ doping) GaN, which results in a p++ layer with a dopantconcentration of at least approximately 4×10¹⁹ dopants per cubiccentimeter. Turning now to FIG. 12, a p-type layer 300 can be gradedaway from an electron blocking layer 302. The p-type layer 300 caninclude the compositional inhomogeneous regions and also include a layercontaining the transparent and conductive regions described herein.

When semiconductors are graded from the electron blocking layer to thep-type layer, polarization doping can occur. FIGS. 13A-13C illustratestudies of the polarization doping that results from such grading. InFIG. 13A, under zero bias, a p-n diode is simulated to evaluate themagnitude of polarization doping. The electron blocking layer is gradedto the p-type layer, as shown in FIG. 13A. In an embodiment, theelectron blocking layer is either undoped or weakly doped with Mg andthe Mg doping is at most approximately ten percent of the Mg doping inthe p-type layer. Under an applied forward bias (e.g. 4.5 eV), thestructure of the p-n diode changes, as shown in FIG. 13B. In FIG. 13C,the concentration of holes increase significantly (from approximately10¹⁷ to approximately 10¹⁹ 1/cm³) using a sharp grading. This is achange in composition over a short distance along the device length(e.g., the distance from the n-cladding layer to the p-cladding layeralong the layer thickness). In the example shown in FIGS. 13A-13C, thegrading is performed over a distance of approximately 20 nanometers(nm). FIGS. 14A-14C illustrate a slightly different embodiment where theentire electron blocking layer is graded and the grading is spread outover a larger thickness (approximately 60 nm). The resultantpolarization doping is correspondingly smaller due to a smoother gradingand the maximum doping is approximately 3×10¹⁸ 1/cm³. While thepolarization doping may be lower in the case shown in FIG. 14C, thebarrier layer associated with the electron blocking layer is smaller aswell. This results in a higher transmission of holes over the barrier.

A theoretical basis for the devices described herein is included forclarity. However, it is understood that the invention is not limited tothe inventor's current understanding of the benefits described herein orthe basis for such benefits.

The overall wall plug efficiency of a light emitting device, such asdevice 10 (FIG. 2), is related to tradeoffs associated with theconductivity and the transparent characteristics of the semiconductorlayers. In particular, the p-type cladding layer(s) can have a lowconductivity and highest absorption coefficient compared to all otherlayers in a deep ultraviolet LED. Consider the total resistance of thedevice 10 as a sum of a resistance due to p-type cladding layer(s)(R_(p)) and a resistance due to all other components of the device 10,such as the resistances of the active region 18, n-type cladding layer16, the contact resistances, and/or the like (R_(r)). The total voltage(V_(T)) across the device 10 is given by:V _(T) =V _(on) +I(R _(r) +R _(p))with V_(on) being a turn on voltage and I being the current. The totalpower dissipated (P_(dis)) on a device 10 is:P _(dis) =IV _(T) =I ²(R _(p) +R _(r))+IV _(on)

A device 10, such as a light emitting diode, described herein canoperate at a set current I. Furthermore, assume that R_(r) is fixed andknown. The resistivity of a p-type contact layer, R_(p), can be writtenas:

$\frac{1}{R_{p}} = {\frac{1}{R_{1}} + \frac{1}{R_{2}}}$Here, R₁ is a portion of the p-type layer, such as superlattice (PSL) 22(FIGS. 5A-5C), with a relatively low resistance and a relatively lowtransparency, while R₂ is a part of the PSL lattice with a relativelyhigh resistance and a relatively high transparency. For cases whenR₁<<R₂, it is sufficient to approximate R_(p)˜R₁. This simple modelassumes that most of the conduction in the p-type layer 22 happensthrough channels, which are connected domains with a lower concentrationof aluminum, a higher concentration of indium, and a higherconcentration of dopants. Regions of the layer 22 with a low resistancecan be described by their characteristic resistivity ρ₁, as well as thegross cross sectional area that corresponds to these regions (furtherdenoted as A₁); thus:R ₁=ρ₁ L _(HL) /A ₁.Here L_(HL) denotes the corresponding length of the layer. Using f=A₁/A,where A is a total area of a device, then:R ₁=[(ρ₁ L _(HL))/A] (1/f)=R ₀/f.As a simple approximation, the resistance R₀ can be taken to be theresistance of a p-type contact layer composed of a characteristicsemiconductor material, such as GaN or InGaN having a characteristichigh p-doping (e.g., approximately 10¹⁹ dopants per cubic centimeter).

FIG. 15 shows the effect of the absorption coefficient of the layer 22(e.g., a p-type superlattice) on the total extracted light from anillustrative light emitting diode structure according to an embodiment.The effect is shown in the context of a deep ultraviolet LED, and wasobtained through ray tracing simulations. As illustrated, the totalradiative power of the LED depends roughly linearly on log₁₀(α/α₀), withα₀ being a normalization parameter. FIG. 16 shows a numerical fit to theray tracing data according to an embodiment. Radiative power is thenwritten as:P _(out) =A−B log₁₀(α/α₀)where A, and B are fitting constants.

The transmittance of a layer is related to the absorption coefficientand the p-type cladding layer as:T=T ₀exp(−αL _(PSL))If a part of the area of a p-type cladding layer is not substantiallytransparent but is more conductive (this area is A₁), then the totaltransmission is given by (under an assumption of a uniform light fluxper unit area):

$T_{tot} = {{T\left( {1 - \frac{A_{1}}{A}} \right)} = {{T\left( {1 - f} \right)} = {T_{0}\mspace{11mu}{\exp\left( {{- \alpha^{\prime}}L_{HL}} \right)}}}}$Here α′ is a modification of the absorption coefficient due to area A₁not being transparent. From this it follows that:exp(−αL _(HL))(1−f)=exp(−α′L _(HL)) or α′=α−log(1−f)/L _(HL)Using the expression for P_(out), with α′=α′(f;α): P_(out)=A−Blog₁₀(α′/α₀) and we can calculate the wall plug efficiency as:WPE(f)=P _(out)(f)/P _(dis)(f).

Wall plug efficiency can have a maximum for a particular value of f andcan depend on the resistivity of the device, a thickness of the PSL, andthe absorption coefficient α. FIG. 17 shows a plot of the WPE as afunction of the conductance area fraction, f, for typical LED materialsaccording to an embodiment. As illustrated, a peak wall plug efficiencyis obtained at a value of the conductance area fraction f betweenapproximately 0.3 and 0.6. In an embodiment, a total area of the set oftransparent regions in a lateral cross section of the PSL is at leastten percent (f=0.1) of the total area of the lateral cross section. In amore particular embodiment, the total area of the set of transparentregions is between approximately thirty and sixty percent of the totalarea of the lateral cross section.

It is important to observe that the average distance betweeninhomogeneities should be on the order of current spreading length inorder for the device to have uniform current/light emission throughoutthe semiconducting layers. Current spreading length in one period of aPSL is given by:

${L_{spread} = \sqrt{\frac{lkT}{q\;\rho\; J_{0}}}},$where l is the thickness of a period layer, ρ is the resistivity of acurrent spreading layer, and J₀ is a current density. Using thisformula, the current spreading length is estimated to be betweenapproximately 0.1 μm and approximately 1 μm.

As discussed herein, the set of higher conductive regions can beconfigured to keep the voltage drop across the layer within a desiredrange. In an embodiment, a target resistance per area for the layer canbe calculated based on attributes of the layer and attributes of theoperating environment for the device. For example, an illustrativedevice configuration can include a layer that is 200 nanometers thickand has a lateral cross sectional area of 200 micrometers by 200micrometers, a target voltage drop of one Volt across the layer, and anoperating current of 0.02 Amperes. In this case, a target totalresistance of the layer can be calculated as 1 Volt/0.02 Amps=50 Ohms,and a target resistivity of the layer can be calculated as:50 Ohms×4×10⁻⁸/(2×10⁻⁷)=10 Ohm·m.Using a target resistivity of 1000 Ohm*cm, a target resistance per areaof a 200 nanometer thick layer can be calculated as:1000 Ohm·cm×2×10⁻⁵ cm=2×10⁻² Ohm·cm².

The transparency of a short period superlattice (SPSL) can be calculatedby either averaging the optical absorption and refraction coefficientsof the SPSL or computing absorption and reflection coefficientsnumerically using Maxwell equations. The absorption coefficients, α,depend on the absorption edge of the semiconductor material which is afunction of the molar fractions x, y, and z of aGa_(z)In_(y)Al_(x)B_(1−x−y−z)N semiconductor alloy for a group IIInitride semiconductor material. FIG. 18 shows a typical dependence ofthe absorption coefficient on the wavelength for various aluminum molarfractions in a Al_(x)Ga_(1−x)N alloy according to an embodiment. Inorder to maintain a target absorption coefficient of a p-type layer atorders of 10⁴ inverse centimeters, the content of aluminum in the SPSLbarriers can be carefully chosen for each emitted wavelength. FIG. 19shows how the content of the aluminum can be chosen for each emittedwavelength according to an embodiment. Note that the dependence ofx=x(λ) is linear, withx=−0.0048λ+1.83.To this extent, x can provide a threshold value for a molar fraction ofaluminum, which can be selected to be approximately equal to or exceedthe threshold value.

It is understood that aspects of the invention can be incorporated intovarious types of structures/devices, solutions for designing the varioustypes of structures/devices, and/or solutions for fabricating thevarious types of structures/devices.

For example, an embodiment of the invention can be implemented as partof a solution for designing and/or fabricating a structure and/or aresulting device/structure as described in U.S. patent application Ser.No. 12/987,102, titled “Superlattice Structure,” which was filed on 8Jan. 2011, and which claims the benefit of U.S. Provisional ApplicationNo. 61/293,614, titled “Superlattice Structures and Devices,” which wasfiled on 8 Jan. 2010, both of which are hereby incorporated byreference. Similarly, an embodiment of the invention can be implementedas part of a solution for designing and/or fabricating a structureand/or a resulting device/structure as described in U.S. patentapplication Ser. No. 13/162,895, titled “Superlattice Structure,” whichwas filed on 17 Jun. 2011, which is hereby incorporated by reference. Ineither case, the structure/device can comprise a superlattice layerincluding a plurality of periods, each of which is formed from aplurality of sub-layers. Each sub-layer comprises a differentcomposition than the adjacent sub-layer(s) and comprises a polarizationthat is opposite a polarization of the adjacent sub-layer(s).Furthermore, one or more of the sub-layers can comprise lateralregion(s) configured to facilitate the transmission of radiation, suchas ultraviolet radiation, through the layer and lateral region(s)configured to facilitate current flow through the sub-layer as describedherein.

Furthermore, an embodiment of the invention can be implemented as partof a solution for designing and/or fabricating a structure and/or aresulting device/structure as described in U.S. patent application Ser.No. 12/960,476, titled “Semiconductor Material Doping,” which was filedon 4 Dec. 2010, and which claims the benefit of U.S. ProvisionalApplication No. 61/266,523, titled “Method of Doping and SemiconductorDevices,” which was filed on 4 Dec. 2009, both of which are herebyincorporated by reference. Similarly, an embodiment of the invention canbe implemented as part of a solution for designing and/or fabricating astructure and/or a resulting device/structure as described in U.S.patent application Ser. No. 13/162,908, titled “Semiconductor MaterialDoping,” which was filed on 17 Jun. 2011, which is hereby incorporatedby reference. In either case, the structure/device can comprise asuperlattice structure as described herein, in which a target banddiscontinuity between a quantum well and an adjacent barrier is selectedto coincide with an activation energy of a dopant for the quantum welland/or barrier. For example, a target valence band discontinuity can beselected such that a dopant energy level of a dopant in the adjacentbarrier coincides with a valence energy band edge for the quantum welland/or a ground state energy for free carriers in a valence energy bandfor the quantum well. Additionally, a target doping level for thequantum well and/or adjacent barrier can be selected to facilitate areal space transfer of holes across the barrier. The quantum well andthe adjacent barrier can be formed such that the actual banddiscontinuity and/or actual doping level(s) correspond to the relevanttarget(s).

Furthermore, an embodiment of the invention can be implemented as partof a solution for designing and/or fabricating a structure and/or aresulting device/structure as described in U.S. patent application Ser.No. 13/161,961, titled “Deep Ultraviolet Light Emitting Diode,” whichwas filed on 16 Jun. 2011, and which claims the benefit of U.S.Provisional Application No. 61/356,484, titled “Deep Ultraviolet LightEmitting Diode,” which was filed on 18 Jun. 2010, both of which arehereby incorporated by reference. In this case, the structure/device,such as a light emitting diode, can include an n-type contact layer anda light generating structure, which includes a set of quantum wells,adjacent to the n-type contact layer. The contact layer and lightgenerating structure can be configured so that a difference between anenergy of the n-type contact layer and an electron ground state energyof a quantum well is greater than an energy of a polar optical phonon ina material of the light generating structure. Additionally, the lightgenerating structure can be configured so that its width is comparableto a mean free path for emission of a polar optical phonon by anelectron injected into the light generating structure. The diode caninclude a blocking layer, which is configured so that a differencebetween an energy of the blocking layer and the electron ground stateenergy of a quantum well is greater than the energy of the polar opticalphonon in the material of the light generating structure. The diode caninclude a composite contact, including an adhesion layer, which is atleast partially transparent to light generated by the light generatingstructure and a reflecting metal layer configured to reflect at least aportion of the light generated by the light generating structure. Then-type contact layer, light generating structure, blocking layer, and/orcomposite contact can include a superlattice configured as shown anddescribed herein.

Another embodiment of the present invention is illustrated in FIGS.20A-20B. In particular, FIGS. 20A-20B show the distribution ofinhomogeneities in an illustrative semiconductor layer according to twoscales. The semiconductor layer can comprise a p-type contact layer, ap-type superlattice, or one of the quantum well or barrier layers withinan active structure. In FIG. 20A, the distribution of inhomogeneitiesare depicted as a contour map 400. In particular, the contour map 400illustrates the bandgap variation of the inhomogeneities in the layer,with the lines of the contours representative of values of a constantbandgap. As shown in FIG. 20A, the bandgap variation of theinhomogeneities can include large domains 402 and small domains 404.Although FIG. 20A depicts only one large domain 402 and one small domain404 for purposes of clarity, it is understood that a contour map for thedistribution of inhomogeneities of a layer can have additional large andsmall domains. In one embodiment, the large domains 402 can includevalleys or hills that represent the inhomogeneities distribution, whilethe small domains 404, which are superimposed over the large domains,can also include valleys or hills that represent the inhomogeneitiesdistribution, but in a more specific location within a large domain. Inone embodiment, the large domains 402 provide a first scale, while thesmall domains 404 provide a second scale. In this manner, the firstscale of the large domains and the second scale of the small domains 404can be used to improve conductivity of the semiconductor layer (largescale fluctuations) and improve carrier localization (small scalefluctuations).

In FIG. 20B, the distribution of inhomogeneities are depicted in a plot406 of bandgap 400 versus a range of values of X. In particular, theplot 406 shows a representative cut of the bandgap variation of theinhomogeneities in the layer at a constant value Y=Y₀, for a range ofvalues of X, where X and Y are the lateral spatial coordinates of thelayer. Like FIG. 20A, the bandgap variation of the inhomogeneitiesdepicted in FIG. 20B can include large domains 402 and small domains 404to represent the fluctuations of the inhomogeneities in the layer. Thelarge domains 402 correspond to large valley/hill regions and arerepresentative of a first scale, while the small domains 404 correspondto finer valley/hill regions and are representative of a second scale.

In one embodiment, the scales can be measured, for example, by computinglocal averages of bandgaps within each sub-unit of area Ai of the layer.For example, one can first start by subdividing the area by largesub-regions Al and calculating the average bandgap on each sub-region todetermine the large scale. Then finer subdivision of an area andcalculation of average bandgap for each region can yield details aboutthe finer scales. In this manner, the large scale inhomogeneity can beselected such that its characteristic size is smaller than an inverse ofa dislocation density for the semiconductor layer. This can result in areduction of non-radiative recombination by preventing carriers to becaptured at the dislocation cores.

FIGS. 21A-21C illustrate another embodiment of the present invention. Inparticular, FIGS. 21A-21C show examples of arrangements of a set oftransparent regions and a set of conductive regions within differentlayers of a semiconductor with the sets having periodic structures thatare spatially-shifted between neighboring layers according to anembodiment. For example, in one embodiment illustrated in FIG. 21A, asemiconductor 408 can include a laminate of layers LA, LB, LC and LD. Itis understood that the layers LA, LB, LC and LD in the laminate depictedin FIG. 21A are only illustrative of one possible configuration and arenot meant to limit the scope and breadth of the embodiments describedherein. The laminate of layers LA, LB, LC and LD can each include a setof transparent regions 410. As shown in FIG. 21A, the layer LA hastransparent regions 410A, the layer LB has transparent regions 410B, thelayer LC has transparent regions 410C, and the layer LD has transparentregions 410D. The transparent regions in each of the layers LA, LB, LCand LD can be structured laterally along the layer in a periodicdistribution. In one embodiment, the transparent regions are spatiallyphase-shifted in relation to the periodic distribution of thetransparent regions in immediately adjacent or neighboring layers. Asused herein, a periodic distribution means a distribution that can havea characteristic length scale distance between regions in a layer, andhave a characteristic length scale of the region, wherein thecharacteristic length scale can be obtained by examining the averagelength scale and standard deviation from such length scale. Thisdefinition of a periodic distribution also covers semi-periodicdistributions. The periodic distribution regions within layers LA, LB,LC and LD of semiconductor 408 can be obtained through patterning, orsemiconductor layer overgrowth. In another embodiment, the periodicdistribution can be obtained by selecting a particular epitaxial growthmethod, such as a three-dimensional epitaxial growth approach which iswell-known in art.

As shown in FIG. 21A, the periodic distribution of the transparentregions 410A in the layer LA is shifted relative to the periodicdistribution of the transparent regions 410B in the layer LB by a valuedefined as a phase shift. In FIG. 21A, the phase shift between thetransparent regions 410A in the layer LA and the transparent regions410B in the layer LB is represented by the spacing 412. The phase shiftcan be selected to promote light extraction efficiency from the device.In one embodiment, the spatial phase-shift of the set of transparentregions in the layers LA, LB, LC and LD can be uniform. In anotherembodiment, the spatial phase-shift of the set of transparent regions inthe semiconductor layers can vary in periodicity among neighboringlayers. Generally, the phase shift can be selected to promote lightextraction efficiency from the light emitting device in which thestructure of this embodiment is configured with.

FIG. 21B is similar to FIG. 21A, except that the semiconductor 414 ofthis figure can include a set of conductive regions 416 in each of thelaminate of layers LA, LB, LC and LD. In this manner, the layer LA hasconductive regions 416A, the layer LB has conductive regions 416B, thelayer LC has conductive regions 416C, and the layer LD has conductiveregions 416D. The conductive regions in each of the layers LA, LB, LCand LD are structured laterally along the layer in a periodicdistribution. In one embodiment, the conductive regions are spatiallyphase-shifted in relation to the periodic distribution of the conductiveregions in immediately adjacent or neighboring layers. It is understoodthat the phase shift of the conductive regions can be the same ordifferent for each of layers LA, LB, LC and LD, and in general, suchshift can be selected to yield the best conductivity of thesemiconductor layer.

The laminate of layers of the semiconductor are not meant to be limitedto having either only a set of transparent regions in the layers or onlya set of conductive regions as illustrated in FIGS. 21A-21B,respectively. In one embodiment, the layers of the semiconductor cancontain both periodic distributions of transparent regions andconductive regions in the layers. Alternatively, in another embodiment,the layers of the semiconductor can contain both transparent regions andconductive regions, wherein the transparent regions and the conductiveregions are structured laterally along a layer in a periodicdistribution.

FIG. 21C shows another embodiment in which the laminate semiconductorheterostructures 408 and 414 shown in FIGS. 21A and 21B, respectivelycan be used as a component of a larger semiconductor heterostructure418. In one embodiment, as shown in FIG. 21C, the heterostructure 418can include a first layer 420 comprising the semiconductor laminatestructure 408 shown in FIG. 21A, a second layer 422 comprising thesemiconductor laminate structure 414 structure shown in FIG. 21B, and athird layer 424 which can include a homogeneous layer of homogeneoussemiconductor composition formed between layers 420 and 422. In anotherembodiment, the heterostructure 418 can include a first layer 420comprising the semiconductor laminate structure 408 or 414 shown in FIG.21A or 21B, a second layer 422 also comprising the semiconductorlaminate structure 408 or 414 structure shown in FIG. 21A or 21B,separated by the third layer 424. It is understood, that these examplesof arrangements of laminate semiconductor heterostructures are onlyillustrative of a few configurations and those skilled in the art willappreciate that other arrangements of structures are possible and withinthe scope of the various embodiments described herein.

FIG. 22 shows a semiconductor heterostructure 426 grown over a substrate12 having roughness elements 428 on an exterior side surface 430 of thesubstrate according to an embodiment. In one embodiment, the roughnesselements 428 can be configured to improve light extraction from thesemiconductor heterostructure 426 and any optoelectronic device, such asan ultraviolet light emitting diode, that can include theheterostructure 426. As shown in FIG. 22, the roughness elements 428 canbe formed on the exterior side surface 430 of the substrate 12 that isopposite a side surface near the interface of the substrate 12 and asemiconductor buffer layer 432 that can be epitaxially grown on thesubstrate, which can also have roughness elements 428 formed in aninterior portion.

The size and shape of the roughness elements 428 in the substrate 12 andthe layer 432 can be optimized to improve light extraction from thesemiconductor heterostructure 426 and the device that includes theheterostructure. In one embodiment, the roughness elements 428 caninclude etched domains having a characteristic size that is at least awavelength of target radiation, such as a peak wavelength of theradiation emitted by the semiconductor heterostructure 426. For example,the etched domains of the roughness elements 428 can include truncatedpyramids, inverted pyramids, conical elements, and/or the like. Theroughness elements 428 can also include, but are not limited to,protrusions. In one embodiment, the roughness elements 428 can includeexternally deposited roughness elements comprising shapes of Al₂O₃,SiO₂, and/or the like. Furthermore, although FIG. 22 shows the roughnesselements 428 formed on the side surface 430 of the substrate 12, it ispossible to have the roughness elements formed in other locations aboutthe substrate such as within its internal portion, on a facing portion,an edge portion, and/or the like. Similarly, the roughness elements 428formed on the interior of the layer 432 can be formed on other locationssuch as a facing portion, an edge portion, and/or the like.

In another embodiment, the roughness elements 428 can be patterned. Inthis manner, the patterned roughness elements 428 can have a periodicstructure or an aperiodic structure. In an embodiment, the patternedroughness elements 428 can form photonic crystals each having acharacteristic size that is comparable to the wavelength of the targetradiation (e.g., the peak radiation emitted by the semiconductorheterostructure 426). As used herein, a characteristic size that iscomparable means a characteristic size within +/−50% of the wavelengthof the target radiation. The roughness elements 428 can be patternedusing well-known techniques that can include, but are not limited to,etching, deposition, and the like.

As shown in FIG. 22, the semiconductor heterostructure 426 can furtherinclude other semiconductor layers grown on the substrate 12 and thelayer 432, such as layers 434, 436, 438, 440, 442, 444, 446, and 448.For example, the layers 434 and 440 can include sets of transparentregions and conductive regions according to any one of the variousarrangements discussed above with regard to FIGS. 21A-21C. In thismanner, each of the sets of transparent regions and conductive regionsthat can be deployed with the layers 434 and 440 can be formed withcharacteristic sizes and distances between such regions in a layer andin immediately adjacent layers that are selected to optimize overallefficiency (e.g., wall plug) of the semiconductor heterostructure 426and the device that can include the heterostructure.

While shown and described herein as a method of designing and/orfabricating an emitting device to improve extraction of light from thedevice, it is understood that aspects of the invention further providevarious alternative embodiments. For example, aspects of the inventioncan be implemented to facilitate the transmission of light within thedevice, e.g., as part of optical pumping of a laser light generatingstructure, excitation of a carrier gas using a laser pulse, and/or thelike. Similarly, an embodiment of the invention can be implemented inconjunction with a sensing device, such as a photosensor or aphotodetector. In each case, a profiled surface can be included in anexterior surface of the device and/or an interface of two adjacentlayers of the device in order to facilitate the transmission of lightthrough the interface in a desired direction.

In one embodiment, the invention provides a method of designing and/orfabricating a circuit that includes one or more of the devices designedand fabricated as described herein. To this extent, FIG. 23 shows anillustrative flow diagram for fabricating a circuit 126 according to anembodiment. Initially, a user can utilize a device design system 110 togenerate a device design 112 for a semiconductor device as describedherein. The device design 112 can comprise program code, which can beused by a device fabrication system 114 to generate a set of physicaldevices 116 according to the features defined by the device design 112.Similarly, the device design 112 can be provided to a circuit designsystem 120 (e.g., as an available component for use in circuits), whicha user can utilize to generate a circuit design 122 (e.g., by connectingone or more inputs and outputs to various devices included in acircuit). The circuit design 122 can comprise program code that includesa device designed as described herein. In any event, the circuit design122 and/or one or more physical devices 116 can be provided to a circuitfabrication system 124, which can generate a physical circuit 126according to the circuit design 122. The physical circuit 126 caninclude one or more devices 116 designed as described herein.

In another embodiment, the invention provides a device design system 110for designing and/or a device fabrication system 114 for fabricating asemiconductor device 116 as described herein. In this case, the system110, 114 can comprise a general purpose computing device, which isprogrammed to implement a method of designing and/or fabricating thesemiconductor device 116 as described herein. Similarly, an embodimentof the invention provides a circuit design system 120 for designingand/or a circuit fabrication system 124 for fabricating a circuit 126that includes at least one device 116 designed and/or fabricated asdescribed herein. In this case, the system 120, 124 can comprise ageneral purpose computing device, which is programmed to implement amethod of designing and/or fabricating the circuit 126 including atleast one semiconductor device 116 as described herein.

In still another embodiment, the invention provides a computer programfixed in at least one computer-readable medium, which when executed,enables a computer system to implement a method of designing and/orfabricating a semiconductor device as described herein. For example, thecomputer program can enable the device design system 110 to generate thedevice design 112 as described herein. To this extent, thecomputer-readable medium includes program code, which implements some orall of a process described herein when executed by the computer system.It is understood that the term “computer-readable medium” comprises oneor more of any type of tangible medium of expression, now known or laterdeveloped, from which a stored copy of the program code can beperceived, reproduced, or otherwise communicated by a computing device.

In another embodiment, the invention provides a method of providing acopy of program code, which implements some or all of a processdescribed herein when executed by a computer system. In this case, acomputer system can process a copy of the program code to generate andtransmit, for reception at a second, distinct location, a set of datasignals that has one or more of its characteristics set and/or changedin such a manner as to encode a copy of the program code in the set ofdata signals. Similarly, an embodiment of the invention provides amethod of acquiring a copy of program code that implements some or allof a process described herein, which includes a computer systemreceiving the set of data signals described herein, and translating theset of data signals into a copy of the computer program fixed in atleast one computer-readable medium. In either case, the set of datasignals can be transmitted/received using any type of communicationslink.

In still another embodiment, the invention provides a method ofgenerating a device design system 110 for designing and/or a devicefabrication system 114 for fabricating a semiconductor device asdescribed herein. In this case, a computer system can be obtained (e.g.,created, maintained, made available, etc.) and one or more componentsfor performing a process described herein can be obtained (e.g.,created, purchased, used, modified, etc.) and deployed to the computersystem. To this extent, the deployment can comprise one or more of: (1)installing program code on a computing device; (2) adding one or morecomputing and/or I/O devices to the computer system; (3) incorporatingand/or modifying the computer system to enable it to perform a processdescribed herein; and/or the like.

The foregoing description of various aspects of the invention has beenpresented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formdisclosed, and obviously, many modifications and variations arepossible. Such modifications and variations that may be apparent to anindividual in the art are included within the scope of the invention asdefined by the accompanying claims.

What is claimed is:
 1. A device, comprising: a short period p-typesuperlattice (SPSL) semiconductor layer comprising a plurality ofbarriers alternating with a plurality of quantum wells, wherein aconcentration of at least one barrier and a concentration of at leastone quantum well varies along lateral dimensions of the SPSLsemiconductor layer, wherein a lateral cross section of the at least onebarrier includes: a set of transparent regions, each transparent regionhaving a transmission coefficient for a target radiation wavelength, l,greater than or equal to approximately sixty percent, wherein the set oftransparent regions are at least ten percent of an area of the lateralcross section of the at least one barrier; and a set of higherconductive regions occupying at least two percent of the lateral crosssection of the at least one barrier and having an average resistance perunit area to a vertical current flow resulting in a total voltage dropacross the SPSL of less than approximately five volts.
 2. The device ofclaim 1, wherein the SPSL semiconductor layer is p-doped with Magnesium.3. The device of claim 2, wherein the concentration of the Magnesium inat least one quantum well is less than less than 5·10¹⁵[1/cm³].
 4. Thedevice of claim 1, wherein each barrier is formed of an Al_(x)Ga_(1−x)Nalloy, where x is a molar fraction of aluminum and where x is selectedsuch that an absorption coefficient of the barrier is at least 10⁴inverse centimeters.
 5. The device of claim 1, wherein the set of higherconductive regions comprises regions with a characteristic bandgap thatis at least five percent smaller than a characteristic band gap of theset of transparent regions within the area of the lateral cross sectionof the at least one barrier.
 6. The device of claim 1, wherein each ofthe plurality of barriers and each of the plurality of quantum wells hasa thickness less than or equal to approximately five nanometers.
 7. Thedevice of claim 1, wherein the set of transparent regions areinterspersed with the set of higher conductive regions in anapproximately uniform arrangement throughout the lateral cross sectionof the at least one barrier.
 8. A device, comprising: a short periodsuperlattice (SPSL) semiconductor layer comprising a plurality ofbarriers alternating with a plurality of quantum wells, wherein alateral cross section of each barrier includes: a set of transparentregions, each transparent region having a transmission coefficient for atarget radiation wavelength, l, greater than or equal to approximatelysixty percent, wherein the set of transparent regions are at least tenpercent of an area of the lateral cross section of the barrier; and aset of higher conductive regions occupying at least two percent of thelateral cross section of the barrier and having an average resistanceper unit area to a vertical current flow resulting in a total voltagedrop across the SPSL of less than approximately five volts; wherein theset of transparent regions and the set of higher conductive regions areformed by a non-uniform compositional distribution along the barrierthickness and/or barrier thickness of each barrier.
 9. The device ofclaim 8, wherein the set of transparent regions and the set of higherconductive regions have a non-uniform doping in addition to thenon-uniform compositional distribution.
 10. The device of claim 9,wherein the non-uniform doping of the set of transparent regions and theset of higher conductive regions includes a modulation doping with avariation of acceptor concentration that exceeds approximately 1×10¹⁸1/cm³.
 11. The device of claim 8, wherein the set of transparent regionsand the set of higher conductive regions are formed using athree-dimensional growth mode.
 12. The device of claim 8, wherein theset of transparent regions and the set of higher conductive regions areformed directly on an inhomogeneous layer.
 13. The device of claim 8,wherein the set of transparent regions and the set of higher conductiveregions are formed using nano-scale inhomogeneities.
 14. A device,comprising: a semiconductor layer comprising a set of group III nitridelayers, wherein each one of the group III nitride layers is aninhomogeneous layer comprising at least one of: a set of transparentregions having a first characteristic band gap, wherein the set oftransparent regions are at least ten percent of an area of the lateralcross section of the inhomogeneous layer; and a set of higher conductiveregions having a second characteristic band gap at least five percentsmaller than the first characteristic band gap, wherein the set ofhigher conductive regions occupy at least two percent of the area of thelateral cross section of the inhomogeneous layer, wherein the set ofhigher conductive regions comprises B_(w)Al_(x)Ga_(y)In_(z)N, where 0≤W,X, Y, Z≤1, and W+X+Y+Z=1.
 15. The device of claim 14, wherein a spatialdistribution of the set of transparent regions and the set of higherconductive regions within the set of group III nitride layers isuniform.
 16. The device of claim 14, wherein a distribution density ofthe set of transparent regions and the set of higher conductive regionswithin the set of group III nitride layers varies between adjacentlayers.
 17. The device of claim 14, wherein at least one of the groupIII nitride layers comprises both the set of transparent regions and theset of higher conductive regions, wherein the set of transparent regionsand the set of higher conductive regions are structured laterally alongthe inhomogeneous layer in a periodic distribution, with the set oftransparent regions alternating with the set of higher conductiveregions.
 18. The device of claim 14, further comprising at least onehomogeneous layer formed between adjacent inhomogeneous layers havingone of the set of transparent regions and the set of higher conductiveregions.
 19. The device of claim 18, wherein the at least onehomogeneous layer comprises a surface with roughness elements.
 20. Thedevice of claim 2, wherein the concentration of the Magnesium in atleast one barrier is greater than 5·10¹⁸[1/cm³].